Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 189, Issue -, Pages 2-12Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2011.11.002
Keywords
Nanocrystals; Photovoltaics; Energy; Sustainability; Printed electronics
Ask authors/readers for more resources
This review article summarizes our research focused on Cu(In1-xGax)Se-2 (CIGS) nanocrystals, including their synthesis and implementation as the active light absorbing material in photovoltaic devices (PVs). CIGS PV layers are typically made using a high temperature ( >450 degrees C) process in which Cu, In and Ga are sequentially or co-evaporated and selenized. We have sought to use CIGS nanocrystals synthesized with the desired stoichiometry to deposit PV device layers without high temperature processing. This approach, using spray deposition of the CIGS light absorber layers, without high temperature selenization, has enabled up to 3.1% power conversion efficiency under AM 1.5 solar illumination. Although the device efficiency is too low for commercialization, these devices provide a proof-of-concept that solution-deposited CIGS nanocrystal films can function in PV devices, enabling unconventional device architectures and materials combinations, including the use of flexible, inexpensive and light-weight plastic substrates. (C) 2011 Elsevier Inc. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available