Journal
JOURNAL OF SOLID STATE CHEMISTRY
Volume 192, Issue -, Pages 28-33Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2012.03.051
Keywords
Atomistic simulation; Doped ceria; Dislocation; Electron microscopy; Interaction; Incubational domain
Funding
- Ministry of Education, Culture, Sports, and Technology (MEXT), Japan [22310053]
- Global Research Center for Environment and Energy based on Nanornaterials Science (GREEN), National Institute for Materials Science, Japan
- Grants-in-Aid for Scientific Research [22310053] Funding Source: KAKEN
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Microstructures of both Gd- and Y-doped ceria with different doping level (i.e., 10 at% and 25 at%) have been comprehensively characterized by means of high resolution transmission electron microscopy and selected area electron diffraction. Coherent nano-sized domains can be widely observed in heavily doped ceria. Nevertheless, it was found that a large amount of dislocations actually exist in lightly doped ceria instead of heavily doped ones. Furthermore, incubational domains can be detected in lightly doped ceria, with dislocations located at the interfaces. The interactions between such linear dislocations and dopant defects have been simulated accordingly. As a consequence, the formation mechanism of incubational domains is rationalized in terms of the interaction between intrinsic dislocations of doped ceria and dopant defects. This study offers the insights into the initial state and related mechanism of the formation of nano-sized domains, which have been widely observed in heavily rare-earth-doped ceria in recent years. (C) 2012 Elsevier Inc. All rights reserved.
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