Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 52, Issue 3, Pages 315-320Publisher
SPRINGER
DOI: 10.1007/s10971-009-2062-7
Keywords
Vanadium oxide; Hexadecylamine; EGFET; pH-sensor
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Funding
- FAPESP
- CNPq
- CAPES
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Vanadium oxide/hexadecylamine (V2O5/HDA) sensing membrane was deposited on the glassy carbon substrate and used as the sensing layer of the extended gate H+-ion sensitive field effect transistor (EGFET) device. The structural and morphological features of V2O5/HDA were studied by X-ray diffraction, Fourier transformed-infrared spectroscopy and Scanning electronic microscopy images; and the electrochemical behavior was analyzed by cyclic voltammogram. V2O5/HDA presents a lamellar structure as well as several rod formations. The material stabilizes electrochemically after several cycles and leads to reproducibility of Li+ ion insertion/de-insertion into the vanadium oxide structure. The material was investigated as a pH sensor in the pH range 2-12 and presented a sensitivity of 38.1 mV/pH. The sensitive membrane structure is simple to fabricate and the measurement is fast for application as a disposable sensor.
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