Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 53, Issue 2, Pages 366-371Publisher
SPRINGER
DOI: 10.1007/s10971-009-2104-1
Keywords
Antiferroelectric films; Sol-gel process; Phase switching; Strains
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Funding
- National Natural Science Foundation of China [50572071]
- Ministry of Sciences and Technology of China [2009CB623302]
- Research Fund for Higher Education of Inner Mongolia [NJ09080]
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(Pb0.97La0.02)(Zr0.95Ti0.05)O-3 (PLZT 2/95/5) antiferroelectric films with (100) preferred orientation were successfully prepared on Pt-buffered silicon substrates via the sol-gel method. SEM results indicated that PLZT 2/95/5 antiferroelectric films with a thickness over 1,000 nm showed a crack surface. Also, it was found that, as the increase of the thickness, the field-induced strains were decreased gradually. Moreover, the frequency-dependent field-induced strains illustrated that the typical strains-electric field (S-E) curves with the maximum values could be obtained at a lower measurement frequency < 500 Hz.
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