Journal
JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY
Volume 47, Issue 2, Pages 154-157Publisher
SPRINGER
DOI: 10.1007/s10971-008-1773-5
Keywords
BiFeO3; sol-gel; ferroelectricity; dielectric property; leakage current
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BiFeO3 film has been deposited on Pt/Ti/SiO2/Si substrate by a simple sol-gel process annealed at 500 degrees C. X-ray diffraction analysis revealed that the film was fully crystallized and no impure phase was observed. Cross-section scanning electric microscopy results indicated that the thickness was about 600 nm. Large remanent polarization was observed. The double remanent polarization is 95.8 mu C/cm(2) at an applied field of 800 kV/cm. Intense dielectric dispersion was observed above 100 kHz. At a biased electric field of 167 kV/cm, the leakage current densities were identified as similar to 10(-5) to 10(-4) A/cm(2).
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