Journal
APPLIED PHYSICS EXPRESS
Volume 8, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.8.095202
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Funding
- NSFC [51422201]
- Program of NSFC [51172041, 51372035, 61505026]
- 973 Program [2012CB933703]
- 111 Project [B13013]
- Fund from Jilin Province [20121802, 201201061]
- Research Fund for the Doctoral Program of Higher Education [20130043110004]
- Fundamental Research Funds for the Central Universities [2412015KJ008]
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A simple top electrode preparation process, employing continuous graphene oxide films as electrode supporting layers, was adopted to fabricate a ZnO nanorod array/p-GaN heterojunction LED. The achieved LED demonstrated different electroluminescence behaviors under forward and reverse biases: a yellow-red emission band was observed under forward bias, whereas a blue-UV emission peak was obtained under reverse bias. Electroluminescence spectra under different currents and temperatures, as well as heterojunction energy-band alignments, reveal that the yellow-red emission under forward bias originates from recombinations related to heterointerface defects, whereas the blue-UV electroluminescence under reverse bias is ascribed to transitions from near-band-edge and Mg-acceptor levels in p-GaN. (C) 2015 The Japan Society of Applied Physics
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