Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 24, Issue 39, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/24/39/395003
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Funding
- Russian Foundation for Basic Research
- program of the Presidium of the RAS
- Russian Ministry for Science and Education [16.513.11.3066]
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Physical properties of the Si(111)-7 x 7 surface of low-doped n- and p-type Si samples are studied in the liquid helium temperature region by scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination completely removes the band bending near the surface and restores the initial population of the surface states. Our results indicate the existence of the energy gap 2 Delta = 40 +/- 10 meV in the intrinsically populated Si(111)-7 x 7 surface.
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