4.5 Article

Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 22, Issue 33, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/22/33/334224

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Funding

  1. US National Science Foundation [DMR-0800367, EPS-0814194, DMR-0400938]

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We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave (CDW) depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 s. The square-wave response shows that the dynamic responses to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.

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