Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 22, Issue 30, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/22/30/302002
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Funding
- Global Research Consortium of the Semiconductor Research Corporation
- ONR [N00014-08-1-1107]
- Defense Threat Reduction Agency [HDTRA1-07-1-0008]
- NSF 'QSPINS' MRSEC [DMR-0820521]
- Nebraska Research Initiative
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A significant BN-to-graphene charge donation is evident in the electronic structure of a graphene/h-BN(0001) heterojunction grown by chemical vapor deposition and atomic layer deposition directly on Ru(0001), consistent with density functional theory. This filling of the lowest unoccupied state near the Brillouin zone center has been characterized by combined photoemission/k vector resolved inverse photoemission spectroscopies, and Raman and scanning tunneling microscopy/spectroscopy. The unoccupied sigma*(Gamma(1)+) band dispersion yields an effective mass of 0.05 m(e) for graphene in the graphene/h-BN(0001) heterostructure, in spite of strong perturbations to the graphene conduction band edge placement.
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