Anisotropic magnetoresistance in manganites: experiment and theory

We present measurements of the anisotropic magnetoresistance (AMR) of La(0.75)Sr(0.25)MnO(3) films deposited on (001) SrTiO(3) substrates, and a model that describes the experimental results. The model, based on the electronic structure of manganites plus the spin-orbit coupling, correctly accounts for the dependence of the AMR on the direction of the current to the crystalline axes. We measure an AMR of the order of 10(-3) for the current I parallel to the [100] axis of the crystal and vanishing AMR for I parallel to [110], in agreement with the model predictions. Further, we calculate the planar Hall effect and show its connection to AMR.