Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 21, Issue 17, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/21/17/174201
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Funding
- Engineering and Physical Sciences Research Council, UK [EP/C535553/1, EP/E031595/1]
- EPSRC [EP/G004447/1, EP/E031595/1, EP/G004625/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E031595/1, EP/G004447/1, EP/C535553/1, EP/G004625/1] Funding Source: researchfish
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A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.
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