Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 20, Issue 22, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/20/22/225017
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Funding
- National Research Foundation of Korea [2007-01156, R11-2001-091-00002-0, 과06A1506] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the electronic and structural properties of graphene layers grown on a 6H-SiC (Si-terminated) substrate by using core level photoemission spectroscopy (CLPES), low energy electron diffraction (LEED), and near edge x-ray absorption fine structure (NEXAFS). The angle between the plane of the graphene sheet and the SiC substrate was measured by monitoring the variation of the pi* transition in the NEXAFS spectrum with the thickness of the graphene layers. As the thickness of the graphene layers increased, the angle gradually decreased.
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