4.6 Article

A ferroelectric field effect transistor based synaptic weight cell

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 51, Issue 43, Pages -

Publisher

IOP Publishing Ltd
DOI: 10.1088/1361-6463/aad6f8

Keywords

neuromorphic computing; analog synapse; ferroelectric; field-effect-transistor

Funding

  1. ASCENT, one of six centers in JUMP, a Semiconductor Research Corporation (SRC) program - DARPA [2776.038]
  2. National Science Foundation [1640081, 1552687]
  3. Nanoelectronics Research Corporation (NERC) through Extremely Energy Efficient Collective Electronics (EXCEL), an SRC-NRI Nanoelectronics Research Initiative [2698.001]
  4. Direct For Computer & Info Scie & Enginr
  5. Division of Computing and Communication Foundations [1552687] Funding Source: National Science Foundation

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Dense analog synaptic crossbar arrays are a promising candidate for neuromorphic hardware accelerators due to the ability to mitigate data movement by performing in-situ vector-matrix products and weight updates within the storage array itself. However, many analog weight storage cells suffer from long latencies or low dynamic ranges, limiting the achievable performance. In this work, we demonstrate that the voltage-controlled partial polarization switching dynamics in ferroelectric-field-effect transistors (FeFET) can be harnessed to enable a 32 state non-volatile analog synaptic weight cell with large dynamic range (67 x) and low latency weight updates (50 ns) for an amplitude modulated pulse scheme.

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