Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 47, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/47/6/065306
Keywords
conductivity type conversion; oxygen vacancy; phosphorus-doped ZnO films
Categories
Funding
- NRF Korea [2012-005940, 2011-0031933]
- National Research Foundation of Korea [2011-0031933] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
In this study, the oxygen partial pressure dependent physical properties of phosphorous-doped ZnO thin films were investigated. All thin films, grown on Al2O3(0 0 0 1) substrates using pulsed laser deposition, exhibited (0 0 2) orientation regardless of the oxygen partial pressure. However, as the oxygen partial pressure increased, the degree of crystallinity and the concentration of oxygen vacancies in the films decreased. All the thin-film samples showed n- type characteristics except for a sample grown at 100mTorr, which exhibited p- type characteristics. The optical band gap energy also changed with the oxygen partial pressure. The feasible microscopic mechanism of conductivity conversion is explained in terms of the lattice constant, crystallinity, and the relative roles of the substituted phosphorous in the Zn-site and/or oxygen vacancies depending on the oxygen partial pressure.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available