Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/7/074002
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Funding
- French Agence Nationale de la Recherche (ANR CILOMAG)
- French Agence Nationale de la Recherche (SPIN)
- French Agence Nationale de la Recherche (RAMAC)
- French Agence Nationale de la Recherche (PATHOS)
- European Commission (ERC Adv Grant HYMAGINE)
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This paper is focused on thermally assisted magnetic random access memories (TA-MRAMs). It explains how the heating produced by Joule dissipation around the tunnel barrier of magnetic tunnel junctions (MTJs) can be used advantageously to assist writing in MRAMs. The main idea is to apply a heating pulse to the junction simultaneously with a magnetic field (field-induced thermally assisted (TA) switching). Since the heating current also provides a spin-transfer torque (current-induced TA switching), the magnetic field lines can be removed to increase the storage density of TA-MRAMs. Ultimately, thermally induced anisotropy reorientation (TIAR)-assisted spin-transfer torque switching can be used in MTJs with perpendicular magnetic anisotropy to obtain ultimate downsize scalability with reduced power consumption. TA writing allows extending the downsize scalability of MRAMs as it does in hard disk drive technology, but it also allows introducing new functionalities particularly useful for security applications (Match-in-Place (TM) technology).
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