Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 34, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/34/345103
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Funding
- National Basic Research Program of China (973 Program) [2013CB632404]
- National Natural Science Foundation of China [50902068, 11174129, 51272101]
- Jiangsu Provincial Science and Technology Research Program [BK2011056]
- Fok Ying Tong Education Foundation [122028]
- Science Research Foundation of the Graduate School of Nanjing University
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The surface treatment of In0.30Ga0.70N photoelectrode in different acid electrolytes (HCl, HBr and a H2SO4 aqueous solution) has been investigated. The highest photocurrent is obtained after the surface treatment in H2SO4 aqueous solution. After H2SO4 treatment, the In0.30Ga0.70N photoelectrode responds to 550 nm and the maximum incident photon-to-current efficiency reaches about 58% under 400-430 nm, which is higher than the previous highest value (42%) on an InGaN photoelectrode. A possible mechanism is also proposed to explain the reason for the highest photocurrent enhancement after H2SO4 surface treatment. The results of the x-ray photoelectron spectroscopy, the inductively coupled atomic emission spectroscope and the electrochemical impedance spectra suggest that the surface segregation layer, as recombination centres of photo-generated holes and electrons, is decreased after H2SO4 surface treatment.
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