Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 16, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/16/165105
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Funding
- Australian Research Council
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ZnO films have been reactively deposited on sapphire substrates at 300 degrees C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (similar to 5 x 10(18) cm(-3)) and a Hall mobility of 8.0 cm(2) V-1 s(-1), making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 10(4) at +/- 2V and sensitivity to UV light.
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