Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 41, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/41/415001
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- Defence Research and Technology Office (DRTech) of Singapore
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The permeability mu and resonant frequency f(r) of stripe domain ferrite doped CoFe thin films are enhanced from 14 to 22 and 6.0 GHz to 6.4 GHz, respectively, by using Ta buffer layer. The observed enhancement of both permeability and resonant frequency seems to deviate from Snoek's law which expects the value of mu decrease as the f(r) increases. Compared to the case of using Permalloy (Ni80Fe20) buffer layer where mu is enhanced to 25 and f(r) is reduced to 4.1 GHz, the present result suggests that the employment of Ta buffer layer may be useful in the quest for high permeability magnetic thin films at GHz frequency range.
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