Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 46, Issue 30, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/46/30/305105
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Funding
- National Basic Research Program of China [2011CB302006]
- Natural Science Foundation of China [11134009, 11104265, 61177040]
- Science and Technology Developing Project of Jilin Province [20111801]
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By virtue of the carrier avalanche multiplication caused by an impact ionization process occurring in MgO insulation layer, zinc oxide (ZnO)-based ultraviolet (UV) avalanche photodetectors (APDs) have been fabricated from Au/MgO/ZnO/MgO/Au structures. The responsivity of APDs can reach 1.7 x 10(4) AW(-1), and the avalanche gain of the photodetectors is about 294 at 73 V. Considering that no previous report on ZnO APDs can be found, the results reported in this paper may promise a route to high-performance ZnO UV photodetectors.
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