Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 45, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/45/455101
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Funding
- National Key Basic Research Program [2011CB302000]
- National Science Foundation of China [10974262]
- Fundamental Research Funds for the Central Universities [111gpy16]
- Pearl River Rising Star Program [2011J2200096]
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We demonstrate the growth of BexZn1-xO alloy thin films on c-sapphire substrates by plasma-assisted molecular beam epitaxy. The formation of BexZn1-xO is very sensitive to the Be content in the alloy. Be atoms occupy the Zn lattice sites at low Be content, but move partly to the interstitial sites with increasing Be content. We also investigated the thermal stability of N, one of the most frequently used p-type dopants, in the BexZn1-xO films. Secondary ion mass spectrometry shows that Be element plays a crucial role in stabilizing N in the BexZn1-xO host, which is favourable in improving the solid solubility and the thermal stability of acceptor dopants in ZnO-based wide-gap semiconductors.
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