Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 19, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/19/195104
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We show that the deposition of ZnO films under varying oxygen partial pressure and annealing conditions allows for the controllable formation of specific defects. Using x-ray diffraction and photoluminescence, we characterize the defects formed and show that these defects are responsible for changes in film carrier density, carrier type, sheet resistivity and mobility.
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