Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/5/055303
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Funding
- National Institute of Information and Communications Technology (NICT) of Japan through the Japan Trust
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The interface formation between SrTiO3 and SrZrO3 has been studied using in situ photoelectron spectroscopy. Epitaxial SrZrO3 thin films were grown on (0 0 1)-oriented SrTiO3 : Nb single crystals via pulsed-laser deposition. The epitaxial SrZrO3 growth was verified via x-ray diffraction and Cs-corrected high angle annular dark field scanning transmission electron microscopy. A type I straddling configuration has been found for the interface analysed with a valence band and conduction band offset of 0.5 eV and 1.9 eV, respectively.
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