Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 49, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/49/495305
Keywords
-
Categories
Funding
- RFBR [11-08-01049-a, 11-08-00539-a]
- Presidium of the RAS [24]
- Ministry of Education and Science of the Russian Federation
Ask authors/readers for more resources
The interface properties of the GaInP/Ge hetero-structure solar cells were studied. It was found that an undesirable potential barrier for the majority carriers could occur at the n-GaInP/n-Ge hetero-interface during the growth of multi-junction solar cells. The potential barrier at the GaInP/Ge interface leads to S-shape behaviour of I-V curves at low temperatures, which was observed either for the single junctions or for the multi-junction solar cells containing the n-GaInP/n-Ge interface. The values of the effective barrier height and width as 0.12 +/- 0.05 eV and 45-55 nm, respectively, were estimated by admittance spectroscopy and by C-V profiling measurements.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available