Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/45/3/035001
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Funding
- Spanish Ministry of Science [MAT2008-06567-C02]
- FEDER
- Aragon Regional Government
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We report the temperature dependence of the resistivity, the anisotropic magnetoresistance and the Hall effect of iron microwires grown by focused-electron-beam-induced deposition. By modifying the growth conditions in a controllable way, we study wires with iron compositions varying from 45% to 70%, which present different electrical conduction mechanisms, with resistivity values differing over three orders of magnitude. The magnetoresistance depends highly on the composition, and it can be understood by a subtle interplay between the anisotropic magnetoresistance and intergrain magnetoresistance due to their complex microstructure, consisting of an iron-carbon-oxygen amorphous matrix. A giant value for the anomalous Hall effect is found, which we explain by a large contribution of the skew scattering mechanism. The present results emphasize the correlation between the exotic microstructure of the microwires, and their magnetotransport properties.
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