Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 31, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/31/315401
Keywords
-
Categories
Funding
- Academic Research at the University of Jordan [1030]
- Hamdi Mango Center for Scientific Research (HMCSR)
- New Jersey Institute of Technology
Ask authors/readers for more resources
Room-temperature 1535 nm band photoluminescence in similar to 126 nm silica films (6 at% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 degrees C). Emission is strongly enhanced for annealing near 850 degrees C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
