Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 32, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/32/325107
Keywords
-
Categories
Funding
- DOE [DE-FG02-03ER46028, DE-FG02-03ER46027]
- NSF/MRSEC [DMR-0520527]
- NSF [DMR-0537588]
- Chinese Scholar Council (CSC)
Ask authors/readers for more resources
Strain changes the band structure of semiconductors. We use x-ray absorption spectroscopy to study the change in the density of conduction band (CB) states when silicon is uniaxially strained along the [1 0 0] and [1 1 0] directions. High stress can be applied to silicon nanomembranes, because their thinness allows high levels of strain without fracture. Strain-induced changes in both the sixfold degenerate Delta valleys and the eightfold degenerate L valleys are determined quantitatively. The uniaxial deformation potentials of both Delta and L valleys are directly extracted using a strain tensor appropriate to the boundary conditions, i.e., confinement in the plane in the direction orthogonal to the straining direction, which correspond to those of strained CMOS in commercial applications. The experimentally determined deformation potentials match the theoretical predictions well. We predict electron mobility enhancement created by strain-induced CB modifications.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available