Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 33, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/44/33/335104
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Funding
- National Natural Science Foundation of China [50802041, 50872050]
- National Key Projects for Basic Researches of China [2010CB923404, 2009CB929503]
- Southeast University
- [NCET-09-0296]
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We report the coexistence of bipolar and unipolar resistive switching (BRS and URS) in a Ag/Zn0.98Cu0.02O/ITO structure. The resistance ratio between the high-resistance state (HRS) and the low-resistance state (LRS) is about 10(6) for the BRS. The URS is observed with a positive bias applied on the ITO electrode, which is more stable than the BRS. The resistance ratio between the HRS and LRS of the URS is about 10(4). The Schottky barrier at the Zn0.98Cu0.02O/Ag interface plays an important role in both the BRS and URS processes.
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