Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles

ZnO is especially attractive among the materials showing resistance switching because of its excellent properties such as light emitting and transparency for visible light. Unfortunately, the resistance switching in a ZnO-based device is usually unstable. By dispersing Ag particles of size similar to 20 nm at the electrode-ZnO interface, we significantly improved the resistance uniformity, set/reset repeatability of Ag-ZnO-Pt devices. Conducting atomic force microscope analysis revealed the appearance of micro-regions where resistance switching, with an improved stability, is more easily triggered. It is suggested that Ag particles act as seeds for conducting filaments, leading to depressed randomness and reduced diameter of the conducting paths.