4.6 Article

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 44, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/44/445402

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Funding

  1. Department of Physics, Universiti Putra Malaysia (UPM)
  2. Ministry of Higher Education (MOHE) Malaysia
  3. Australian Research Council
  4. Australian Government's National Collaborative Research Infrastructure Strategy (NCRIS)

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The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourable at lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 degrees C) and V/III ratios (44 to 700) investigated in this study.

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