Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 13, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/13/132003
Keywords
-
Categories
Funding
- Spanish MICINN [FIS2009-12964-C05-04]
- Consolider Ingenio [CSD2008-00023]
- Lorraine Region (France)
- NSERC
- NRC
- CIHR
- University of Saskatchewan
Ask authors/readers for more resources
We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available