Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/7/073001
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The technological importance of III-V nitride semiconductors relies on their variety of applications, which cover optical, optoelectronic and electronic devices capable of operating under extreme values of current, voltage and temperature. The major roadblock for full realization of the potential of nitride semiconductors is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapour phase epitaxy and ammonothermal for GaN and sublimation for AlN, much more must be attained before establishing a bulk growth technique of choice to grow these materials. A brief review of the structural, optical and electronic properties of the state of the art of bulk and thick-film (quasi-bulk) nitride substrates and homoepitaxial films is presented, and a few device applications are also highlighted.
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