Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/7/075402
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Funding
- Science and Technology Plan Project of Fujian Province of China [2007HZ0037]
- FJIRSM [SZD08001-2, SZD09001]
- Key Laboratory of Optoelectronic Materials Chemistry and Physics of CAS [2009KL004]
- National Natural Science Foundation of China [50902129]
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High optical quality Dy3+-doped Gd3Ga5O12 (abbreviated as Dy : GGG below) crystal was grown by the Czochralski technique along the (1 1 1) orientation. The absorption spectrum, fluorescence spectrum and fluorescence decay curve of Dy : GGG have been recorded at room temperature. Based on the Judd-Ofelt (J-O) theory, the intensity parameters from the measured line strengths were determined. The J-O parameters were used to predict radiative transition probabilities, radiative lifetime and branching ratios for various excited levels of the Dy : GGG crystal. In the visible region, one intense fluorescence band was observed at 581 nm, corresponding to the F-4(9/2) --> H-6(13/2) transition. The room-temperature fluorescence lifetime of this transition of Dy3+ ion in the GGG crystal was measured to be 0.79 ms, and the luminescent quantum efficiency of the F-4(9/2) level was evaluated to be 71.4 %. The emission cross-sections of the F-4(9/2) --> H-6(13/2) transition were estimated by the use of the Fuchtbauer-Ladengurg method. The research on the emission at 581 nm indicates the possibility of using a commercially available laser diode of 353 nm as a pumping source for a solid-state yellow laser.
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