4.6 Article

Improvement of efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with trapezoidal wells

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 35, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/43/35/354004

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Funding

  1. Ministry of Education, Science and Technology (MEST) of Korea [R31-2008-000-10026-0]
  2. Ministry of Land, Transport, and Maritime Affairs [20090006]
  3. Korean government (MEST) [R15-2008-006-02001-0]
  4. Korea Institute of Marine Science & Technology Promotion (KIMST) [20090006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
  5. National Research Foundation of Korea [2008-0062150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigated InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with trapezoidal wells to improve the efficiency droop. MQW LEDs with trapezoidal wells showed a lower operating voltage and an improved efficiency droop with a low crossover current density of 5Acm(-2), which was a significant improvement over conventional LEDs that use rectangular wells. The external quantum efficiency was increased by 20% at a current density of 70Acm(-2). The improvement in efficiency droop of the MQWs with trapezoidal wells can be attributed to an increased internal quantum efficiency due to the enhanced overlap of the electron and hole wave functions at high current densities.

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