Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 16, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/0022-3727/42/16/165104
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Funding
- National Science Council of Taiwan [97-2628-M-018-001-MY3]
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Capacitance-voltage and current-voltage characteristics of Au/n-type Si (n-Si) and Au/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT : PSS)/n-Si Schottky diodes were investigated in this study. The interfacial phenomenon was explained in terms of the generation of an interfacial dipole subsequently affecting the electron-injection barrier. The authors found that inserting a PEDOT : PSS layer at the Au/n-Si interface may result in the formation of an interfacial dipole, increase the upward band bending in Si near the interface and reduce the reverse-bias leakage current. In this study, higher quality Schottky junctions were formed on n-Si using a simple technique of spin-coating PEDOT : PSS as the metal electrode.
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