Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/10/105407
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Funding
- FCT [FEDER-POCTI/0155, PTDC/CTM/73263/2006]
- JMT [SFRH/BD/24012/2005]
- European Community [MRTN-CT-2003-504462]
- Fundação para a Ciência e a Tecnologia [PTDC/CTM/73263/2006, SFRH/BD/24012/2005] Funding Source: FCT
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Magnetic tunnel junctions (MTJs) are under investigation since they offer great potential for applications in magnetic memories. An interesting effect in TJs concerns non-volatile resistive switching of non-magnetic origin. We report magnetic (magnetoresistance) and structural (resistive; R) switching in MgO-based MTJs (barrier thicknesses t = 0.75, 1.35 nm). As-grown MTJs display R-switching only in the thinnest series, while thicker barrier samples need an electroforming step for R-switching to occur. Forming changes the electrical resistance temperature dependence, from tunnel-to metallic-like, revealing the formation of conductive bridges across the barrier which, leading to local high electrical fields and temperatures, are essential for resistive switching.
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