Journal
PHYSICAL REVIEW LETTERS
Volume 114, Issue 3, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.037401
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Funding
- NSF [DMR-1010768, ECCS-0335765]
- Kavli Institute at Cornell for Nanoscale Science
- Cornell Center for Materials Research Shared Facilities [DMR-1120296]
- Natural Sciences and Engineering Research Council of Canada Postgraduate Scholarship
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Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of -0.22 meV/T between luminescence peak energies in sigma(+) and sigma(-) emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.
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