4.6 Article

Optical gain at the F-band of oxidized silicon nanocrystals

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 13, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/13/135102

Keywords

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Funding

  1. Institutional Research Plan [AV0Z 10100521]
  2. Centrum MSMT LC510 [GAAV IAA101120804, GAAV KJB100100903]
  3. GACR [202/07/0818]

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In this paper we present time-resolved optical gain spectroscopy using the variable stripe length technique in combination with the shifting excitation spot technique under pumping with nanosecond laser pulses. Measurements reveal positive optical gain on a nanosecond time scale at 430 nm (F-band), accompanied by spectral narrowing and a threshold behaviour of the amplified spontaneous emission as a function of the excitation intensity. We show that the presence of the slow-red (S-band) emission component critically influences the observation of stimulated emission from the F-band.

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