Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal-organic precursors doped p-type ZnO layer grown by MOCVD technology

An n-ZnO/p-ZnO : Sb homojunction light emitting diode was fabricated on c-plane sapphire by metal-organic chemical vapour deposition (MOCVD). The p-type ZnO layer with a hole concentration of 1.27 x 10(17) cm(-3) was fabricated using trimethylantimony (TMSb) as the Sb doping source. The current-voltage characteristics of the device exhibited a desirable rectifying behaviour with a turn-on voltage of 3.3V. Distinct electroluminescence with ultraviolet and visible emissions was detected from this device under forward bias at room temperature. Moreover, metal-organic source TMSb is an effective and controllable dopant in the MOCVD technique, which is suitable for further industrialized production.