Dielectric relaxation behaviour of nanostructured Mn-Zn ferrite

Dielectric measurements and modulus analysis have been made to investigate the effects of grain size, frequency and temperature for nanostructured Mn-Zn ferrite. The anomalous frequency dependence of dielectric loss (tan delta) can be attributed to the resonance effect and also to the presence of both n- and p- type charge carriers. The tan d for 59 and 69 nm grain size samples is found to be an order of magnitude smaller than those of bulk particles. Dielectric relaxation studies using modulus formalism have shown the presence of the non-Debye type of dielectric relaxation in these materials.