Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 41, Issue 13, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/41/13/135403
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This work presents a study of the correlation between the electrical properties and the structural defects in nominally undoped InN films. It is found that the density of edge-type threading dislocations (TDs) considerably affects the electron concentration and mobility in InN films. The Hall-effect measured electron concentration increases, while the Hall mobility decreases with the increase in the edge-type TD density. With the combination of secondary ion mass spectrometry and positron annihilation analysis, we suggest that donor-type point defects at the edge-type TD lines may serve as dominant donors in InN films and affect the carrier mobility.
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