Journal
PHYSICAL REVIEW LETTERS
Volume 114, Issue 25, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.256601
Keywords
-
Categories
Funding
- STC Center for Integrated Quantum Materials, NSF [DMR-1231319]
- U. S. Army Research Laboratory
- U. S. Army Research Office through the Institute for Soldier Nanotechnologies [W911NF-13-D-0001]
- Burke Fellowship at Caltech
Ask authors/readers for more resources
Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available