Journal
PHYSICAL REVIEW LETTERS
Volume 114, Issue 9, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.096802
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Funding
- DOE [DE-FG02-06ER46274]
- NSF [DMR-1207562]
- Welch Foundation [C-1682]
- U.S. Department of Energy (DOE) [DE-FG02-06ER46274] Funding Source: U.S. Department of Energy (DOE)
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1207562] Funding Source: National Science Foundation
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We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e(2)/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12 T applied in-plane field; the conductance increases from 2e(2)/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.
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