Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 73, Issue 4, Pages 589-592Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2011.12.016
Keywords
Semiconductors; Thin films; X-ray diffraction
Funding
- National Natural Science Foundation of China [21176180]
- Research Fund for the Doctoral Program of Higher Education of China [20100032110021]
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An air-stable n-channel semiconductor material, CuPcF16, was synthesized in a slightly modified procedure and characterized by infrared (IR), X-ray diffraction (XRD), UV-vis and fluorescence spectra. CuPcF16 showed a monomer characteristic in THF and pyridine while exhibited an aggregation property in DMF. The CuPcF16/P-6p (CuPcF16 on p-6p) organic thin film transistors (OTFTs) using CuPcF16 as an active layer and p-6p as an inducing layer was fabricated by the physical vapor deposition technique. Charge carrier field-effect mobility (mu), I-on/I-off and threshold voltage (V-T) of the CuPcF16/p-6p OTFTs were 0.07 cm(2)/V s, 10(5) and 5.28 V. respectively. The charge mobility of the OTFTs was two or even three times higher than that of the conventional single layer CuPcF16-based OTFTs. The improved performance was attributed to the introduction of p-6p to form a highly oriented and continuous film of CuPcF16 with the molecular pi-pi conjugated direction parallel to the substrate. (C) 2012 Elsevier Ltd. All rights reserved.
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