Journal
PHYSICAL REVIEW LETTERS
Volume 114, Issue 21, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.216601
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Funding
- National Basic Research Program [2012CB921703, 2012CB921300, 2015CB921102]
- National Science Foundation of China [91121003, 11325421, 61425015]
- Chinese Academy of Sciences
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Anderson localization, the absence of diffusive transport in disordered systems, has been manifested as hopping transport in numerous electronic systems, whereas in recently discovered topological insulators it has not been directly observed. Here, we report experimental demonstration of a crossover from diffusive transport in the weak antilocalization regime to variable range hopping transport in the Anderson localization regime with ultrathin (Bi1-xSbx)(2)Te-3 films. As disorder becomes stronger, negative magneto-conductivity due to the weak antilocalization is gradually suppressed, and eventually, positive magneto-conductivity emerges when the electron system becomes strongly localized. This work reveals the critical role of disorder in the quantum transport properties of ultrathin topological insulator films, in which theories have predicted rich physics related to topological phase transitions.
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