4.5 Article

High-quality oriented ZnO films grown by sol-gel process assisted with ZnO seed layer

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 71, Issue 3, Pages 364-369

Publisher

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2010.01.001

Keywords

ZnO films; Sol-gel process; X-ray diffraction

Funding

  1. Shanghai Institute of Technology [YJ 2007-03]

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High-quality oriented ZnO films were prepared on silicon and quartz glass by sot-gel, assisted with a ZnO seed layer. The effects of the seed layer on the orientation, morphology and optical properties of ZnO films were investigated. Results show that the seed layer can effectively induce the growth of high-quality oriented ZnO films on two substrates, and the effectiveness of the seed layer strongly depends on preparation conditions, i.e., the spin-coating layer number and the preheating temperature. ZnO films with five layers on the seed layer preheated at 500 degrees C exhibit the single (0 0 2) orientation, which is much stronger than that on the flat substrate. Additionally, ZnO films on the seed layer show a denser internal structure and higher optical quality than that on the flat substrate. At ten layers, however, ZnO films on the seed layer show the multiple-orientation, which is similar to that on the flat substrate. Finally, the physical mechanism underlying the growth behavior of ZnO films assisted with the seed layer was discussed. (C) 2010 Elsevier Ltd. All rights reserved.

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