Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume 69, Issue 5-6, Pages 1486-1490Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2007.10.040
Keywords
nanostructures; epitaxial growth; electron microscopy; crystal structure
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Vertically well-aligned ZnO nanowires were synthesized on c-Al2O3 substrates at 950 degrees C by the vapor-phase epitaxy (VPE) method. An Au thin film with a thickness of 3 nm was used as a catalyst. The growth direction and length of the ZnO nanowires were successfully controlled by adjusting the ramping rate. Tilted nanowires with a shorter length were grown by increasing the ramping rate, while vertically well-aligned nanowires with a longer length were uniformly formed by decreasing the ramping rate. The X-ray diffraction (XRD) and high-resolution transmission electron microscope measurements showed that the vertically well-aligned ZnO nanowires on the c-Al2O3 substrate have a single-crystalline hexagonal structure and preferred c-axis growth orientation. (c) 2007 Elsevier Ltd. All rights reserved.
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