4.8 Article

Approaching Truly Freestanding Graphene: The Structure of Hydrogen-Intercalated Graphene on 6H-SiC(0001)

Journal

PHYSICAL REVIEW LETTERS
Volume 114, Issue 10, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.106804

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Funding

  1. Initiative and Networking Fund of the Helmholtz Association, Postdoc Programme [VH-PD-025]
  2. Academy of Finland through its Centres of Excellence Program [251748]

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We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full (6 root 3 x 6 root 3)-R30 degrees unit cell, based on a van der Waals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate. A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H-SiC(0001) approaches ideal graphene.

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