Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 9, Issue 18, Pages 5254-5261Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.8b02293
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Funding
- National Natural Science Foundation of China [51173205, 11334014]
- Fundamental Research Funds for the Central Universities of Central South University [2016zzts049]
- Chinese National Science Foundation [51375503]
- National Science Foundation [DMR-1303742, CBET-1437656]
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The heteroepitaxial growth of fullerene (C-60) on single-crystal black phosphorus (BP) has been studied using low-energy electron diffraction, X-ray and ultraviolet photoelectron spectroscopy, and density functional theory simulation. The occupied orbital features from C-60 observed in the photoelectron spectra for C-60/BP interface are slightly broadened at higher coverages of C-60 and exhibit no direct evidence of hybridization, demonstrating that the C-60/BP interaction is physisorption. Oxygen exposure of interface leads to obvious oxidation of BP in which C-60 bridges the large electron-transfer barrier from BP to oxygen and plays an important role for the production of O-2(-) and oxidation of BP. Our findings suggest that C-60 does not form an ideal protection layer as the other n-type semiconductors. With the assistance of density functional theory calculations, the oxidized phosphorus at the interface prevents further charge transfer from BP to C-60.
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