Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 4, Issue 9, Pages 1519-1525Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jz400626r
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Funding
- Institute of Nanotechnologies for Clean Energies (INCE)
- Generalitat Valenciana [ISIC/2012/008]
- Ministerio de Educacion y Ciencia [HOPE CSD2007-00007]
- Universitat Jaume I [12I361.01/1]
- project CYTED-Nanoenergia
- UNAM-Mexico [PAPIIT-IN106912]
- CONACyT-Mexico
- National Research Foundation (NRF) Singapore (CRP) [NRF-CRP4-2008-03]
- [CONACyT-153270]
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The effect of semiconductor passivation on quantum-dot-sensitized solar cells (QDSCs) has been systematically characterized for CdS and CdS/ZnS. We have found that passivation strongly depends on the passivation agent, obtaining an enhancement of the solar cell efficiency for compounds containing amine and thiol groups and, in contrast, a decrease in performance for passivating agents with acid groups. Passivation can induce a change in the position of TiO2 conduction band and also in the recombination rate and nature, reflected in a change in the beta parameter. Especially interesting is the finding that beta, and consequently the fill factor can be increased with the passivation treatment. Applying this strategy, record cells of 4.65% efficiency for PbS-based QDSCs have been produced.
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