Journal
PHYSICAL REVIEW LETTERS
Volume 115, Issue 13, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.115.136802
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Funding
- NSF [DMR-1401193, DMR-1005880]
- NSF PREM program [DMR-0934142]
- French Research Agency
- Partner University Fund from the French Embassy
- Keck foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0934142, 1401193] Funding Source: National Science Foundation
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While numerous methods have been proposed to produce semiconducting graphene, a significant band gap has never been demonstrated. The reason is that, regardless of the theoretical gap formation mechanism, subnanometer disorder prevents the required symmetry breaking necessary to make graphene semiconducting. In this work, we show for the first time that semiconducting graphene can be made by epitaxial growth. Using improved growth methods, we show by direct band measurements that a band gap greater than 0.5 eV can be produced in the first graphene layer grown on the SiC(0001) surface. This work demonstrates that order, a property that remains lacking in other graphene systems, is key to producing electronically viable semiconducting graphene.
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